The gratings were then covered with 2 μm of Zn-doped In 0.49 Ga 0.51 P (the confinement layer) and 0.2-μm GaAs (1.3-μm wavelength composition) (the cap layer). design and device geometry of these devices were not optimized for high power; thus, with proper modification. hoto shows high resolution image of the 9, QW’s between GaNAsSb barriers. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The characteristic temperature T0 for ground-state cw lasing is 78 K up to our temperature measurement limit of 100 °C. D.)--Stanford University, 2002. © 2000 American Institute of Physics. This paper reviews both the materials challenges and progress in growth of the metastable GaInNAs alloys required to reach the 1.3–1.55 μm communication wavelengths and the challenges and progress in device design for both vertical-cavity surface-emitting lasers and higher power edge-emitting lasers. W. Ha, M. A. Wistey, H. Yuen, S. Bank and J. S. Harris, Transmission distance vs. laser modulation frequency for a variety of optical fiber/laser diode, PL of GaInNAs before and after rapid thermal anneal (RTA) of 760ºC for 1 minute, TEM cross-section image of 9 quantum well GaInNAs with GaNAs barrier sample. Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use in surface-emitting laser diodes. Ridge waveguide laser diodes with three Ga, fabricated [20-22]. In this paper we discuss the development of new semiconductor materials and approaches to overcome the fundamental limitations of well established (Al, In)GaAs/InP and InGaAsP/InP infrared-emitting lasers. A dethermalization of quantum objects has been observed at temperatures below 170 K, and the temperature of full dethermalization is estimated to be 80 K. It has been shown that dethermalized quantum objects are not involved in the photovoltaic process and may cause photocurrent losses, while, when thermalized, quantum objects give a photocurrent increment. The structure consisted of 3 GaInNAsSb, Background subtracted PL results from 2 GaInNAs/GaNAs samples and 3, m room temperature GaInNAsSb 3 QW sample both after a. T 0 of 1.3 mm QD lasers as a function of threshold current density per QD layer, Normalised threshold current I th (p)/I th (0) and normalised square of lasing photon energy [E las (p)/E las (0)] 2 against pressure at room temperature for the 980 nm QD laser with one layer of QDs and for the 1.3 mm broad area laser Dashed lines represent fit of the experimental points to estimate contribution of radiative and Auger recombination processes a 980 nm QD laser b 1.3 mm broad area laser, Threshold current density J th per dot layer and characteristic temperature, T 0 , at room temperature of different QD lasers against lasing wavelength Different symbols correspond to different research groups, reference numbers are given in brackets a J th per dot layer b Characteristic temperature, All figure content in this area was uploaded by Igor P. Marko. One, requirement for laser active regions is that the, moderate and controlled strain on readily available binary substrates (GaAs or InP). The effect of adding Sb during growth of InGaAsN/GaAs QWs was studied. The specific recipe of semiconductor materials that is used, such as gallium and arsenide, is chosen based on its ability to produce a specific laser wavelength. GaInNAs and GaInNAsSb long wavelength edge emitting lasers, ) n-type AlGaAs cladding layer was grown between, ) p-type AlGaAs cladding layer followed the active, ) GaAs cap layer was grown for contacting purposes. Chaqmaqchee, F. A. For n-type structures, we find in as-grown samples a huge concentration of an electron trap at EC−0.25eV, which is most likely connected with the nitrogen split interstitial defect (N–N)As. We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T-0) in long-wavelength-range laser … maintaining the wavelength around 1.5µm, led us to grow single-QW PL samples. The impact of carrier density non-pinning above threshold on laser performance is studied in different quantum dot/dash lasers with room temperature emission wavelengths of 0.98-1.52 mu m. Owing to inhomogeneity in the active region, the non-pinning may be important even above room temperature because of the non-thermal carrier distribution between the dots. The concentration of this giant trap can be strongly reduced by rapid thermal annealing. We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T-0) in long-wavelength-range laser diodes. The use of GaInNAs as an active layer is, therefore, very promising for the fabrication of long-wavelength laser diodes with excellent high-temperature performance. Printed in the UK PII: S0268-1242(00)05802-8 TOPICAL REVIEW GaAs-based long-wavelength lasers V M Ustinov and A E Zhukov Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Politekhnicheskaya Str. Spontaneous emission from QW-PhC cavities have been extensively investigated, but they suffer from poor carrier confinement and surface non-radiative recombination. VECODs are introduced in the active region of a GaAsAlGaAs GRIN SCH lasers. to achieve a ground state saturation gain at 300 K of 13 coefficient, i.e. Dilute nitride GaInNAs alloys grown on GaAs have quickly become an excellent candidate for lower cost 1.3-1.55µm vertical cavity surface emitting lasers (VCSELs) and high power edge emitting lasers in the past few years. Lasing at a wavelength of 1,305 nm with a low threshold current density of 55.2 A cm–2 was Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. These both greatly increase Auger recombination involving hole excitation at low temperatures and decrease electron thermal escape due to their Coulombic attraction. Some of the material challenges include the limited solubility. Some of the material challenges include the limited solubility of N in GaAs, nonradiative defects that are caused by either or a combination of N incorporation, low growth temperature, and ion damage from the N plasma source. We report a GaNAsSb p-i-n photodetector operating in the 1.55-mum-wavelength region. GaInNAs is a surprising candidate for long wavelength emission, [1,2]. By application of lateral chromium gratings, distributed feedback (DFB) lasers were fabricated. v will be 3e8 as the velocity is the speed of light in m/s. © 2001 American Institute of Physics. and decreased volume of highly strained material improved the PL. The present study shows that the BH-QW-PhC cavities can exhibit distinctive spontaneous emission control in QW-PhCs. A theoretical approach for analyzing temperature dependencies of open circuit voltage has been proposed.